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| FDC3601N August 2001 FDC3601N Dual N-Channel 100V Specified PowerTrenchMOSFET General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications * Load switch * Battery protection * Power management Features * 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 V RDS(ON)= 550 m @ VGS = 6.0 V * Low gate charge (3.7nC typical) * Fast switching speed. * High performance trench technology for extremely low R DS(ON) . * SuperSOTTM-6 package: small footprint 72% (smaller than standard SO-8); low profile (1mm thick). D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 100 20 (Note 1a) Units V V A W 1.0 4.0 0.96 0.9 0.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 C/W C/W Package Marking and Ordering Information Device Marking .601 Device FDC3601N Reel Size 7'' Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDC3601N Rev C(W) FDC3601N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 100 Typ Max Units V Off Characteristics ID = 250 A,Referenced to 25C VDS = 80 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 A 105 10 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, 2 2.6 -5 370 396 685 4 V mV/C ID = 250 A,Referenced to 25C VGS = 10 V, ID = 1.0 A ID = 0.9 A VGS = 6 V, VGS = 10 V, ID = 1.0 A, TJ = 125C VGS = 10 V, VDS = 10 V VDS = 5V, ID = 1.0 A 500 550 976 m ID(on) gFS 3 3.6 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 50 V, f = 1.0 MHz V GS = 0 V, 153 5 1 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 50 V, VGS = 10 V, ID = 1 A, RGEN = 6 8 4 11 6 16 8 20 12 5 ns ns ns ns nC nC nC VDS = 50 V, VGS = 10 V ID = 1.0 A, 3.7 0.8 1 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.8 A (Note 2) 0.8 0.8 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 130 C/W when mounted on a 0.125 2 in pad of 2 oz. copper. b) 140C/W when mounted on a .004 in2 pad of 2 oz copper c) 180C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDC3601N Rev C(W) FDC3601N Typical Characteristics 4 6.0V ID, DRAIN CURRENT (A) 3 4.0V 2 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 5.0V 1.6 1.4 VGS = 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 1 0 0 2 4 6 8 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 1 2 ID, DRAIN CURRENT (A) 3 4 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.25 RDS(ON), ON-RESISTANCE (OHM) 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 o ID = 1.0A VGS =10V ID = 0.5A 1 0.75 TA = 125oC 0.5 TA = 25oC 125 150 0.25 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 6 VDS = 5V ID, DRAIN CURRENT (A) 4.5 IS, REVERSE DRAIN CURRENT (A) 1 VGS = 0V TA = 125oC 25oC -55oC 0.01 0.1 3 TA = 125oC 25oC 1.5 -55oC 0 1.5 2.5 3.5 4.5 5.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC3601N Rev C(W) FDC3601N Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 1.0A 8 CAPACITANCE (pF) 70V 6 150 VDS = 30V 50V 200 CISS f = 1MHz VGS = 0 V 100 4 50 COSS CRSS 0 2 0 0 1 2 Qg, GATE CHARGE (nC) 3 4 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 RDS(ON) LIMIT 1ms ID, DRAIN CURRENT (A) 1 10ms 100ms 1s DC VGS = 10V SINGLE PULSE RJA = 180oC/W TA = 25oC 0.001 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) 100s P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 180C/W TA = 25C 30 0.1 20 0.01 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) + RJA RJA = 180C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDC3601N Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3 |
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